Journal
NANOSCALE
Volume 7, Issue 19, Pages 8955-8961Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5nr01742d
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Funding
- New Century Excellent Talents in University [NECT-12-0779]
- Program for Yangtze Scholars and Innovative Research Team in University [IRT1207]
- [FRF-TP-14-113A2]
- [FRF-SD-13-006A]
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B-doped 3C-SiC nanowires have been synthesized via a facile and simple carbothermal reduction method at 1500 degrees C for 2 h in a flowing purified argon atmosphere. The obtained nanowires possess a single crystalline and finned microstructure with fins about 100-200 nm in diameter and 10-20 nm in thickness. The diameter of the inner core stem is about 80 nm on average. Due to the smaller band gap, the finned microstructure and the single crystalline nature, the B-doped 3C-SiC nanowires demonstrate efficient activity as high as 108.4 mu mol h(-1) g(-1) for H-2 production, which is about 20 times higher than that of 3C-SiC nanowhiskers and 2.6 times higher than the highest value reported in the literature for SiC materials.
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