4.8 Article

Multilayered silicene: the bottom-up approach for a weakly relaxed Si(111) with Dirac surface states

Journal

NANOSCALE
Volume 7, Issue 38, Pages 15880-15885

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c5nr04548g

Keywords

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Funding

  1. 973 Project of China [2012CB921403, 2013CBA01600, 2012CB921703]
  2. NSFC [11334011, 11222431, 11322431]
  3. Strategic Priority Research Program of the Chinese Academy of Sciences
  4. Hundred Talent Program of IOP, CAS

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Combining first principles investigations and scanning tunneling microscopy, we identify that the presumable van der Waals packed multilayered silicene sheets spontaneously transform into a diamond-structure bulk Si film due to strong interlayer couplings. In contrast to drastic surface reconstruction on conventional Si(111), multilayered silicene prepared by bottom-up epitaxy on Ag(111) exhibits a nearly ideal flat surface with only weak buckling. Without invoking Ag surfactants, root 3 x root 3 honeycomb patterns emerge thanks to dynamic fluctuation of mirror-symmetric rhombic phases, similar to monolayered silicene [Chen et al., Phys. Rev. Lett., 2013, 110, 085504]. The weak relaxation enables novel surface states with a Dirac linear dispersion.

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