Journal
NANOSCALE
Volume 7, Issue 9, Pages 4193-4198Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4nr07045c
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Funding
- National Natural Science Foundation of China (NSFC) [21373196, 91123010]
- Recruitment Program of Global Experts
- Fundamental Research Funds for the Central Universities [WK2060140014, WK2340000050]
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Recently two-dimensional layered semiconductors with promising electronic and optical properties have opened up a new way for applications in atomically thin electronics and optoelectronics. Here we report a large-area growth of monolayer WSe2 directly on SiO2/Si substrates by a chemical vapor deposition (CVD) method under atmospheric pressure. A sub-cooling step was demonstrated to have a key role in achieving this large-area growth. The monolayer configuration of the as-grown WSe2 was proven by spherical-aberration-corrected high resolution scanning transmission electron microscopy (HRSTEM), atomic force microscopy (AFM), Raman spectroscopy and photoluminescence (PL) spectroscopy. P-type behavior of as-grown monolayer WSe2 with a mobility of similar to 0.2 cm(2) V-1 s(-1) and a carrier concentration of 1.11 x 10(18) cm(-3) was confirmed using back-gated field effect transistor (FET) devices. This large-area growth directly on a SiO2/Si substrate provides a new way to meet the industrial manufacturing requirements.
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