CaCu3Ti4O12 thin films with non-linear resistivity deposited by RF-sputtering

Calcium copper titanate, CaCu3Ti4O12, CCTO, thin films with polycrystalline nature have been deposited by RF sputtering on Pt/Ti/SiO2/Si (100) substrates at a room temperature followed by annealing at 600 degrees C for 2 h in a conventional furnace. The CCTO thin film present a cubic structure with lattice parameter a = 7.379 +/- 0.001 angstrom free of secondary phases. The observed electrical features of CCTO thin films are highly dependent on the [CaO12], [CaO4], [ CuO11], [ CuO11Vo chi] and [TiO5 center dot V-O'] clusters. The CCTO film capacitor showed a dielectric loss of 0.40 and a dielectric permittivity of 70 at 1 kHz. The J-V behavior is completely symmetrical, regardless of whether the conduction is limited by interfacial barriers or by bulk-like mechanisms. (C) 2013 Elsevier B.V. All rights reserved.