Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 563, Issue -, Pages 274-279Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2013.02.132
Keywords
ZnSe thin film; Microstructure parameters; Spectroscopic ellipsometry; Band gap; Transmittance spectra
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Funding
- Al-Azhar University Faculty of Science Physics Department Assuit branch
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Different thickness of Zinc selenide (ZnSe) thin films were deposited onto glass substrates by the thermal evaporation technique. Their structural characteristics were studied by X-ray diffraction (XRD). The microstructure parameters, crystallite size and microstrain were calculated. The optical constants (n,k) and film thicknesses of ZnSe thin films were obtained by fitting the ellipsometric parameters (psi and Delta) data using three layer model systems in the wavelength range 300-1100 nm. It is found that the refractive index, n increases with the increase of the film thickness. The possible optical transition in these films is found to be allowed direct transitions. The optical energy gap increase with increasing the film thickness in a narrow range. The experimental transmittances spectrum can be fitted in terms Murmann's exact equation using the modeled thickness and optical constants obtained spectroscopic ellipsometry model. (c) 2013 Elsevier B.V. All rights reserved.
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