4.7 Article

Influence of zinc on electrical and microstructural properties of CaCu3Ti4O12 ceramics prepared by sol-gel process

Journal

JOURNAL OF ALLOYS AND COMPOUNDS
Volume 522, Issue -, Pages 157-161

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2012.01.128

Keywords

CaCu3Ti4O12; Sol-gel; Dielectric properties; Varistor

Funding

  1. Natural Science Foundation of Jiangsu Province [BK2011243]
  2. Research Foundation of Jiangsu University [11JDG084]
  3. State key Laboratory of Electronic Thin Films and Integrated Devices [KFJJ201105]
  4. Shanghai Municipal Education Commission [J50102]
  5. State Key Laboratory of Inorganic Synthesis and Preparative Chemistry of Jilin University
  6. State Key Laboratory of New Ceramic and Fine Processing Tsinghua University [KF201104]
  7. State Key Laboratory of Electrical Insulation and Power Equipment [EIPE11204]
  8. Universities Natural Science Research Project of Jiangsu Province [10KJD430002]

Ask authors/readers for more resources

Zn-substituted CaCu3Ti4O12 ceramics were prepared by the sol-gel method. Their microstructures and electrical properties were investigated. XRD patterns showed that the CaCu3-xZnxTi4O12 (CCZTO) (x = 0.00, 0.06, 0.10, 0.20) ceramics, after sintering at 1050 degrees C for 20 h, were single phase with no Cu-rich phase. SEM results indicated that the samples had smaller grain sizes than those synthesized by traditional solid-state reaction methods. The dielectric and varistor properties of CCZTO were analyzed by a precision impedance analyzer and a varistor tester, respectively. According to Debye's equation, which states that the smaller the leakage current, the smaller the dielectric loss will be in the low-frequency region, we were able to roughly predict the relative value of the dielectric loss at low frequency by the leakage current. The best overall properties were obtained for x = 0.06 (CaCu2.94Zn0.06Ti4O12), which has several prospective applications, such as low voltage varistor switchings, gas-sensing devices, and varistor-capacitor double property devices. (C) 2012 Elsevier B.V. All rights reserved.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.7
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available