Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 509, Issue 5, Pages 1607-1614Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2010.10.210
Keywords
Bulk AlxCoCrFeNi alloys; Cast; Homogenization; Plastic deformation; Melt-spinning; Electrical resistivity; Hall effect; Carrier density; Carrier mobility; Magnetic property; Kondo-like effect; Lattice defects
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Funding
- National Science Council of the Republic of China, Taiwan [NSC96-2221-E007-066-MY3]
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This investigation explores the electrical and magnetic properties of as-cast, -homogenized, and deformed AlxCoCrFeNi (C-x, H-x, and D-x, respectively) alloys at various temperatures from 4.2 to 300K. Experimental results reveal that carrier density of the alloys is of 10(22-23) cm(-3). H-X has a Carrier mobility of 0.40-2.61 cm(2) V-1 s(-1). The residual electrical resistivity of the alloys varies from 100 to 220 mu Omega cm. The temperature coefficient of resistivity (TCR) of H-2.00 is small (82.5 ppm/K). Therefore, defects in the lattice dominate electrical transportation. Some compositions exhibit Kondo-like behavior. At 300K, H-0.50, H-1.25. and H-2.00 are ferromagnetic, while H-0.00, H-0.25, and H-0.75 are paramagnetic. Al and AlNi-rich phases reduce the ferromagnetism of single FCC and single BCC H-x, respectively. Spin glass behavior of some compositions is also observed. Alloys H-x are of the hole-like carrier type, and ferromagnetic H-x exhibits an anomalous Hall effect (AHE). (C) 2010 Elsevier B.V. All rights reserved.
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