Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 509, Issue 9, Pages 3817-3821Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2010.12.184
Keywords
Thin films; Dielectrics; Chemical synthesis; X-ray diffraction
Categories
Funding
- CNPq
- FAPESP
Ask authors/readers for more resources
Calcium copper titanate, CaCu3Ti4O12 (CCTO), thin film has been deposited by the soft chemical method on Pt/Ti/SiO2/Si (1 0 0) substrates at 700 degrees C for 2 h. The peaks were indexed as cubic phase belonging to the Im-3 space group. The film exhibited a duplex microstructure consisting of large grains of 130 nm in length and regions of fine grains (less than 80 nm). The CCTO film capacitor showed a dielectric loss of 0.031 and a dielectric permittivity of 1020 at 1 MHz. The J-V behavior is completely symmetrical, regardless of whether the conduction is limited by interfacial barriers or by bulk-like mechanisms. Based on impedance analyses, the equivalent circuit of CCTO film consisting of a resistor connected in series with two resistor-capacitor (RC) elements. (C) 2011 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available