The effect of NH3 concentrations on the electrical properties of N-doped ZnO and study on mechanism

The N-doped ZnO films deposited by RF magnetron sputtering were treated under various NH3 concentrations. The N-doped ZnO films were characterized by XRD, FESEM, Hall measurement and XPS. The XRD and SEM results showed that ZnO films were crystallized in the wurzite phase with a preferential orientation along the c axis and the surfaces were smooth and dense over the film. The Hall and XPS measurement indicated that N element had doped into ZnO crystal lattice, which is benefit for fabrication of p type ZnO films. (C) 2010 Elsevier B.V. All rights reserved.