Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 507, Issue 2, Pages 557-562Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2010.08.022
Keywords
CuSe; Thin film; Optical dispersion parameters; Dielectric properties; Relaxation time; Optical conductivity; Determination of the gap states
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The paper describes the structural and optical properties of CuSe thin films. X-ray diffraction pattern indicates that CuSe thin film has an amorphous structure. Transmittance T(lambda) and reflectance R(lambda) measurements in the wavelength range (300-1700 nm) were used to calculate the refractive index n(lambda), the absorption index and the optical dispersion parameters according to Wemple and Didomenico WDD model. The dispersion curve of the refractive index shows an anomalous dispersion in the absorption region and a normal dispersion in the transparent region. The optical bandgap has been estimated and confirmed by four different methods. The value for the direct bandgap for the as-deposited CuSe thin film approximately equals 2.7 eV. The Raman spectroscopy was used to identify and quantify the individual phases presented in the CuSe films. (C) 2010 Elsevier B.V. All rights reserved.
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