Journal
NANOSCALE
Volume 7, Issue 7, Pages 3229-3236Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4nr05785f
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Funding
- National Research Foundation (NRF) - Korean government (MSIP) [2011-0013461, 2011-0017605]
- Center for Advanced Soft Electronics under the Global Frontier Research Program of MSIP [2011-0031630]
- National Research Foundation of Korea [2011-0017605, 2011-0013461, CG031502, 2011-0031630] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The resonance effects on the Raman spectra from 5 to 900 cm(-1) of few-layered MoS2 thin films up to 14-layers were investigated by using six excitation energies. For the main first-order Raman peaks, the intensity maximum occurs at similar to 2.8 eV for single layered and at similar to 2.5 eV for few-layered MoS2, which correspond to the band-gap energy. At the excitation energy of 1.96 eV, several anomalous behaviors are observed. Many second-order peaks are anomalously enhanced even though the main first-order peaks are not enhanced. In the low-frequency region (<100 cm(-1)), a broad peak centered at similar to 38 cm(-1) and its second order peak at 76 cm(-1) appear for the excitation energy of 1.96 eV. These anomalous resonance effects are interpreted as occuring due to the strong resonance with excitons or exciton-polaritons.
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