Journal
NANOSCALE
Volume 7, Issue 16, Pages 7072-7077Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4nr06677d
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Funding
- National Natural Science Foundation of China [61422404, 61274057, 51472219]
- Zhejiang Provincial Natural Science Foundation of China [R4110030]
- Program for New Century Excellent Talents in the University [NCET-12-0494]
- Research Fund for the Doctoral Program of Higher Education [20130101110123]
- Program for 14th China-Japan ST Cooperation [2013DFG52800]
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The graphene-silicon (Gr-Si) Schottky junction solar cell has been recognized as one of the most low-cost candidates in photovoltaics due to its simple fabrication process. However, the low Gr-Si Schottky barrier height largely limits the power conversion efficiency of Gr-Si solar cells. Here, we demonstrate that electric field doping can be used to tune the work function of a Gr film and therefore improve the photovoltaic performance of the Gr-Si solar cell effectively. The electric field doping effects can be achieved either by connecting the Gr-Si solar cell to an external power supply or by polarizing a ferroelectric polymer layer integrated in the Gr-Si solar cell. Exploration of both of the device architecture designs showed that the power conversion efficiency of Gr-Si solar cells is more than twice of the control Gr-Si solar cells. Our study opens a new avenue for improving the performance of Gr-Si solar cells.
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