4.7 Article

Synthesis, photoluminescence and dielectric properties of O-deficient SnO2 nanowires

Journal

JOURNAL OF ALLOYS AND COMPOUNDS
Volume 479, Issue 1-2, Pages 74-77

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2009.01.054

Keywords

Semiconductors; Nanostructured materials; Gas-solid reactions; Dielectric response

Funding

  1. National Natural Science Foundation of China [60571029, 50672088]

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High-quality rutile SnO2 nanowires were fabricated by a vapor-phase transport and condensation method assisted by carbothermal reduction. The composition and structure were investigated in detail. It is found that many oxygen vacancies exist in the single-crystalline rutile SnO2 nanowires and can further influence the photoluminescence (PL) and dielectric property of the nanowires. The PL spectrum only exhibits a wide yellow emission centered at 570 nm and usual near band edge emission is not observed, which is ascribed to a large amount of ionized oxygen vacancies. The dielectric measurements indicate that the dielectric response of the SnO2 nanowires is significantly enhanced in the low-frequency range. It is thought both the rotation direction polarization (RDP) and the space charge polarization (SCP) process induced by O vacancies and nanosize effects are the main reasons for the enhancement of relative dielectric constant (epsilon(r)) of these SnO2 nanowires. (c) 2009 Elsevier B.V. All rights reserved.

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