4.8 Article

Highly efficient piezotronic strain sensors with symmetrical Schottky contacts on the monopolar surface of ZnO nanobelts

Journal

NANOSCALE
Volume 7, Issue 5, Pages 1796-1801

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c4nr05597g

Keywords

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Funding

  1. National Major Research Program of China [2013CB932602]
  2. Major Project of International Cooperation and Exchanges [2012DFA50990]
  3. Program of Introducing Talents of Discipline to Universities [B14003]
  4. NSFC [51172022, 51232001, 51372020]
  5. Program for New Century Excellent Talents in University [NCET-12-0777]
  6. Beijing Higher Education Young Elite Teacher Project
  7. Fundamental Research Funds for the Central Universities [FRF-SD-12-032A]
  8. Program for Changjiang Scholars and Innovative Research Team in University

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Piezotronic strain sensors have drawn a lot of attention since the piezotronic theory was established. In this work, we developed a flexible piezotronic strain sensor based on an indium-doped ZnO nanobelt, of which the top surface was the monopolar surface. By connecting two electrodes with the two ends of the top surface of the nanobelt, the strain sensor was constructed. Compared with a nanorod/nanowire based strain sensor, this monopolar surface device avoids the need to identify the polar direction. Under strain, a static potential with the same value and polarity was generated by the coupling effect of the piezoelectric effect and the Poisson effect. This induced piezopotential influenced the Schottky barrier heights at the interfaces of both the source and drain electrodes, resulting in current changes with the same trend at forward and reverse biases. By applying a series of periodical strains, the sensor showed clear, fast and accurate current responses. The gauge factor achieved for compressive strain was 4036. This type of piezotronic strain sensor with a polar surface facing upward presented a high performance and easier fabrication, showing promise for applications in electrical mechanical sensors and MEMS.

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