Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 475, Issue 1-2, Pages 5-8Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2008.07.013
Keywords
Half-Heusler alloy; Thermoelectric property; Disorder effect
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Funding
- National Basic Research Program of China [2007CB607503]
- China Postdoctoral Science Foundation
- Shanghai Postdoctoral Sustentation Fund, China [07R214150]
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The half-Heusler alloy Zr0.25Hf0.25Ti0.5NiSn was studied by electrical resistivity, Seebeck coefficient, Hall effect, thermal conductivity, and specific heat measurements, performed in the temperature range 2-300 K. The transport properties in all temperature range show that the alloy is a narrow-gap semi-conducting material with good thermoelectric efficiency, the value of the figure of merit about 0.094 near room temperature. The multi-component in the alloy increases the atomic disorder between Ti and Zr (Hf, Sn) atoms, which has a strong influence on the electrical transport behaviors and the thermoelectric properties. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.
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