4.7 Article

High-rate, room temperature plasma-enhanced deposition of aluminum-doped zinc oxide nanofilms for solar cell applications

Journal

JOURNAL OF ALLOYS AND COMPOUNDS
Volume 485, Issue 1-2, Pages 379-384

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2009.05.099

Keywords

Zinc oxide; Low-temperature plasmas; Aluminum doping; Thin-film solar cells

Funding

  1. National Research Foundation (Singapore)
  2. Australian Research Council
  3. CSIRO (Australia)

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A custom-designed inductively coupled plasma (ICP)-assisted radio-frequency magnetron sputtering deposition system has been employed to synthesize aluminium-doped zinc oxide (ZnO:Al) nanofilms oil glass substrates at room temperature. The effects of film thickness and ZnO target (partially covered by Al chips) power on the structural, electrical and optical properties of the ZnO:Al nanofilms are studied A high growth rate (similar to 41 nm/min). low electrical sheet resistance (as low as 30 Omega/square) and high optical transparency (>80%) over the visible spectrum has been achieved at a film thickness of similar to 615 nm and ZnO target power of 150 W. The synthesis of ZnO:Al nanofilms at room temperature and with high growth rates is attributed to the unique features of the ICP-assisted radio-frequency magnetron sputtering deposition approach. The results are relevant to the development of photovoltaic thin-film solar cells and flat panel displays. (C) 2009 Elsevier B.V. All rights reserved.

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