Related references
Note: Only part of the references are listed.Atomistic study of dynamics for metallic filament growth in conductive-bridge random access memory
Shengjun Qin et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2015)
Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory
Stefano Ambrogio et al.
ADVANCED MATERIALS (2014)
An Analytical Model for the Forming Process of Conductive-Bridge Resistive-Switching Random-Access Memory
Shaoli Lv et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2014)
Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices
Umberto Celano et al.
NANO LETTERS (2014)
Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches
Jan van den Hurk et al.
NANOTECHNOLOGY (2014)
On the SET/RESET current asymmetry in electrochemical metallization memory cells
Stephan Menzel et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2014)
Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM
Sun Pengxiao et al.
JOURNAL OF SEMICONDUCTORS (2014)
Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories
Stefan Tappertzhofen et al.
ACS NANO (2013)
A Thermally Stable and High-Performance 90-nm Al2O3\Cu-Based 1T1R CBRAM Cell
Attilio Belmonte et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Physics of the Voltage Constant in Multilevel Switching of Conductive Bridge Resistive Memory
Tong Liu et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Rate limiting step for the switching kinetics in Cu doped Ge0.3Se0.7 based memory devices with symmetrical and asymmetrical electrodes
R. Soni et al.
JOURNAL OF APPLIED PHYSICS (2013)
Cation-based resistance change memory
Ilia Valov et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2013)
Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories
I. Valov et al.
JOURNAL OF SOLID STATE ELECTROCHEMISTRY (2013)
Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cells
Stephan Menzel et al.
NANOSCALE (2013)
Switching kinetics of electrochemical metallization memory cells
Stephan Menzel et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2013)
Nanobatteries in redox-based resistive switches require extension of memristor theory
I. Valov et al.
NATURE COMMUNICATIONS (2013)
Rate-limiting processes in the fast SET operation of a gapless-type Cu-Ta2O5 atomic switch
T. Tsuruoka et al.
AIP ADVANCES (2013)
Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches
Tohru Tsuruoka et al.
ADVANCED FUNCTIONAL MATERIALS (2012)
Simulation of multilevel switching in electrochemical metallization memory cells
Stephan Menzel et al.
JOURNAL OF APPLIED PHYSICS (2012)
Quantum conductance and switching kinetics of AgI-based microcrossbar cells
S. Tappertzhofen et al.
NANOTECHNOLOGY (2012)
Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces
Ilia Valov et al.
NATURE MATERIALS (2012)
Observation of conducting filament growth in nanoscale resistive memories
Yuchao Yang et al.
NATURE COMMUNICATIONS (2012)
In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory
Sang-Jun Choi et al.
ADVANCED MATERIALS (2011)
One-dimensional model of the programming kinetics of conductive-bridge memory cells
John R. Jameson et al.
APPLIED PHYSICS LETTERS (2011)
A Detailed Study of the Forming Stage of an Electrochemical Resistive Switching Memory by KMC Simulation
Feng Pan et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2
Y. Bernard et al.
MICROELECTRONIC ENGINEERING (2011)
Forming and switching mechanisms of a cation-migration-based oxide resistive memory
T. Tsuruoka et al.
NANOTECHNOLOGY (2010)
Power and Energy Perspectives of Nonvolatile Memory Technologies
Narbeh Derhacobian et al.
PROCEEDINGS OF THE IEEE (2010)
Electrode kinetics of Cu-SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories
C. Schindler et al.
APPLIED PHYSICS LETTERS (2009)
Nanoionics-based resistive switching memories
RaineR Waser et al.
NATURE MATERIALS (2007)
Bipolar resistive switching in polycrystalline TiO2 films
K. Tsunoda et al.
APPLIED PHYSICS LETTERS (2007)
Nanoscale memory elements based on solid-state electrolytes
MN Kozicki et al.
IEEE TRANSACTIONS ON NANOTECHNOLOGY (2005)
Share Paper
