Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 475, Issue 1-2, Pages 463-468Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2008.07.065
Keywords
Nitride materials; Nanostructured materials; Raman scattering spectrum; Photoluminescence spectrum
Categories
Funding
- National Natural Science Foundation of China [60571029, 50672088]
- key project of the Zhejiang Provincial Natural Science Foundation [Z605131]
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In this paper, sublimation sandwich method (SSM) was introduced to synthesize high-density wurtzite GaN nanowires using Ga and NH3 as starting reagents. Large-scale straight and zigzagged GaN nanowires with different growth direction were grown on gold-coated 6H-SiC substrates at moderate temperatures. The structure properties of these nanowires were investigated in detail. It is found that zigzagged GaN nanowires have hexagonal cross-section and grow along [0001] direction, whereas straight nanowires with smooth surface grow along [11 (2) over bar0] direction. The growth mechanism of the nanowires follows the vapor-liquid-solid (VLS) mechanism. The Raman scattering spectrum of the nanowires presents some new features. in addition, photoluminescence spectra of a single straight and zigzagged GaN nanowire were collected by near-field scanning optical microscope (NSOM) at room temperature, respectively, which displays completely different optical properties. (C) 2008 Elsevier B.V. All rights reserved.
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