Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 468, Issue 1-2, Pages L1-L4Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2007.12.078
Keywords
Nanofabrications; Semiconductor; X-ray diffraction
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A novel lanthanon seed was employed as the catalyst for the growth of GaN nanorods. Large-scale GaN nanorods were synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si(111) substrates. X-ray diffraction, scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectrum were used to characterize the samples. The results demonstrate that the nanorods are single-crystal GaN with hexagonal wurtzite structure and possess good optical properties. The growth mechanism of GaN nanorods is also discussed. (C) 2008 Published by Elsevier B.V.
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