4.7 Article

Influence of sulfur, selenium and tellurium doping on optical, electrical and structural properties of thin films of lead salts

Journal

JOURNAL OF ALLOYS AND COMPOUNDS
Volume 488, Issue 1, Pages 334-338

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2009.08.126

Keywords

Lead chalcogenides; Band gap; Electrical conductivity; Lattice constant

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Lead salts and their alloys with detecting and lasing capabilities have technological importance. High quality polycrystalline thin films of undoped and doped lead salts have been deposited by vacuum evaporation technique onto ultra clean glass substrates. Influence of sulfur, selenium and tellurium doping on optical, electrical and structural properties of lead salts has been investigated. Absorption coefficient and band gap of films were determined by absorbance measurements in wavelength range 2500-5000 nm using FTIR spectrophotometer. Dark dc electrical conductivity and activation energy of films were measured in temperature range 300-380 K through I-V measurements. Crystal structure and lattice parameters of films were determined from X-ray diffraction patterns. (C) 2009 Elsevier B.V. All rights reserved.

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