Microwave dielectric properties of SiC(B) solid solution powder prepared by sol-gel

B-doped SiC powders were synthesized at different temperatures by sol-gel. Results show that C-enriched beta-SiC is generated completely when the temperature is 1700 degrees C and SiC(B) solid solution is generated when the temperature is 1800 degrees C. The electric permittivities of Sic samples were determined in the frequency range of 8.2-12.4 GHz. Results show that the SiC(B) sample has higher values in real part epsilon' and imaginary part epsilon '' of permittivity. The mechanism of dielectric loss by doping has been discussed. (C) 2008 Elsevier B.V. All rights reserved.