Synthesis and photoluminescence of single-crystalline GaN nanowires and nanorods

Single-crystalline GaN nanowires and nanorods have been successfully grown on Si(I 11) substrates by magnetron sputtering through ammoniating the Ga2O3/Nb films at 900 degrees C in a quartz tube. The GaN nanowires and nanorods have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), field-emission transmission electron microscope (FETEM), and photoluminescence. The results show that the diameters of the nanowires are about 50 nm while the diameters of the nanorods are within 100-200 nm. Photoluminescence of the GaN nanostructure, materials revealed only a strong and broad UV light emission peak at 369 nm. Finally, the growth mechanism of GaN nanostructure materials is also briefly discussed. (C) 2006 Elsevier B.V. All rights reserved.