Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 457, Issue 1-2, Pages 36-41Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2007.03.071
Keywords
ZnO films; annealing; photoluminescence
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An undoped ZnO thin film with high resistivity was prepared by rf magnetron sputtering on the quartz substrates using a ZnO (99.999% pure) as target and high pure Ar as sputtering gas. Upon annealing in a temperature range from 513 to 923 K under 10(-3) Pa, the conductive properties of the film change from high resistivity, to n-type, then to p-type and finally to n-type with increasing annealing temperature and the p-type ZnO film was fabricated near 863 K reproducibly. Temperature-dependent photoluminescence (PL) of the p-type ZnO shows a dominant PL band at 3.072 eV at low temperature, which is related to Zn vacancy (V-Zn) acceptor. The intensity of the 3.072 eV band decreases with increasing temperature, implying increment of amount of the hole induced by V-Zn. X-ray photoelectron spectroscopy (XPS) and room temperature PL measurements indicate that the undoped ZnO is Zn-rich and has oxygen vacancy (V-o) and interstitial Zn (Zn-i) donor defects. The amount of V-o and Zn-i donors changes with the annealing temperature. The intrinsic p-type conduction of the undoped ZnO film is ascribed to that the V-Zn acceptor concentration can compensate V-o and Zn-i donor concentration. (C) 2007 Elsevier B.V. All rights reserved.
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