Journal
NANOSCALE
Volume 7, Issue 23, Pages 10357-10361Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5nr02716k
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Funding
- Institute for Basic Science (IBS)
- Basic Science Research Program through National Research Foundation of Korea (NRF) - Korean government (MSIP) [IBS-R011-D1, 2011-0030046, 2012R1A1A1041416, NRF-2014M3C1A3001208, 2009-0083540, 2012R1A1A2020089, 2013M3A6B1078873]
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We report the selective growth of large-area bilayered graphene film and multilayered graphene film on copper. This growth was achieved by introducing a reciprocal chemical vapor deposition (CVD) process that took advantage of an intermediate h-BN layer as a sacrificial template for graphene growth. A thin h-BN film, initially grown on the copper substrate using CVD methods, was locally etched away during the subsequent graphene growth under residual H-2 and CH4 gas flows. Etching of the h-BN layer formed a channel that permitted the growth of additional graphene adlayers below the existing graphene layer. Bilayered graphene typically covers an entire Cu foil with domain sizes of 10-50 mu m, whereas multilayered graphene can be epitaxially grown to form islands a few hundreds of microns in size. This new mechanism, in which graphene growth proceeded simultaneously with h-BN etching, suggests a potential approach to control graphene layers for engineering the band structures of large-area graphene for electronic device applications.
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