Journal
NANO LETTERS
Volume 15, Issue 9, Pages 5804-5810Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b01852
Keywords
Boron nitride; chemical vapor deposition; STM/STS; grain boundary; electronic properties
Categories
Funding
- National Natural Science Foundation of China [51290272, 51222201, 11304053, 51121091, 51472008]
- Ministry of Science and Technology of China [2011CB921903, 2012CB921404, 2013CB932603, 2011CB933003, 2012CB933404]
- Beijing Municipal Science and Technology Planning Project [Z141103004414103]
- Department of Energy
- BES Grant [DE-SC0012547]
- U.S. Army Research Office MURI Grant [W911NF-11-1-0362]
- NSF [OCI-0959097]
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Grain boundaries (GBs) of hexagonal boron nitride (h-BN) grown on Cu(111) were investigated by scanning tunneling microscopy/spectroscopy (STM/STS). The first experimental evidence of the GBs composed of square-octagon pairs (4 vertical bar 8 GBs) was given, together with those containing pentagon-heptagon pairs (5 vertical bar 7 GBs). Two types of GBs were found to exhibit significantly different electronic properties, where the band gap of the 5 vertical bar 7 GB was dramatically decreased as compared with that of the 4 vertical bar 8 GB, consistent with our obtained result from density functional theory (DFT) calculations. Moreover, the present work may provide a possibility of tuning the inert electronic property of h-BN via grain boundary engineering.
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