Journal
NANO LETTERS
Volume 15, Issue 11, Pages 7503-7507Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b03124
Keywords
topological insulators; band bending; bismuth selenide; Shubnikov-de Haas oscillations; chemical vapor transport
Categories
Funding
- European Magnetic Field Laboratory (EMFL) [TSC17-114]
- German Research Foundation DFG [SPP 1666]
Ask authors/readers for more resources
Shubnikov-de Haas oscillations were studied under high magnetic field in Bi2Se3 nanostructures grown by chemical vapor transport, for different bulk carrier densities ranging from 3 x 10(19) cm(-3) to 6 x 10(17) cm(-3). The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensional electron gas. Band bending is investigated, and a crossover from upward to downward band bending is found at low bulk density as a result of a competition between bulk and interface doping. These results highlight the need to control electrical doping both in the bulk and at interfaces in order to study only topological surface states.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available