Journal
NANO LETTERS
Volume 15, Issue 9, Pages 5905-5911Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b01987
Keywords
topological insulator; solvothermal synthesis; bismuth telluride; antimony telluride; heterojunction; transport
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Funding
- National Key Projects for Basic Research in China [2013CB922103, 2011CB922103, 2015CB921202]
- National Natural Science Foundation of China [91421109, 11023002, 11134005, 61176088, 51372112, 2117109, 11474147, 11574133]
- NSF of Jiangsu Province [BK20130054, BC2013118]
- PAPD project
- Fundamental Research Funds for the Central Universities
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A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 was successfully synthesized using a two-step solvotherrnal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized procedure was used. Inspecting the heterojunction using high-resolution transmission electron microscopy showed that epitaxial growth occurred along the horizontal plane. The semiconducting temperature-resistance curve and crossjunction rectification were observed, which reveal a staggered-gap lateral heterojunction with a small junction voltage. Quantum correction from the weak antilocalization reveals the well-maintained transport of the topological surface state. This is appealing for a platform for spin filters and onedimensional topological interface states.
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