Journal
NANO LETTERS
Volume 15, Issue 7, Pages 4374-4380Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b00514
Keywords
Quantum dots; MoS2; TMDCs; FRET; electrical modulation
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Funding
- Office of Naval Research [N000141310299]
- NSF [EPS-1004083, CBET-1134509, DMR-1056859]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1056859] Funding Source: National Science Foundation
- Office Of The Director
- EPSCoR [1004083] Funding Source: National Science Foundation
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We investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS2) is placed atop a homogeneous self-assembled layer of core-shell CdSSe QDs. We demonstrate efficient nonradiative Forster resonant energy transfer (FRET) from QDs into MoS2 and prove that modest gate-induced variation in the excitonic absorption of MoS2 leads to large (-500%) changes in the FRET rate. This in turn allows for up to similar to 75% electrical modulation of QD photoluminescence intensity. The hybrid QD/MoS2 devices operate within a small voltage range, allow for continuous modification of the QD photoluminescence intensity, and can be used for selective tuning of QDs emitting in the visible-IR range.
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