Journal
NANO LETTERS
Volume 15, Issue 3, Pages 1773-1779Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl504446r
Keywords
Nanowires; GaN; Selective area growth; molecular beam epitaxy; proximity effects; polarity
Categories
Funding
- Deutsche Forschungsgemeinschaft (DFG) via the Forschergruppe 1493
- TUM.solar
- excellence program Nanosystems Initiative Munich
- Spanish MINECO [MAT2014-51480-ERC (e-ATOM)]
- Generalitat de Catalunya [2014SGR1638]
- ICREA Funding Source: Custom
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In this work the position-controlled growth of GaN nariowires (NW-s) on diamond by means of molecular beam epitaxy is investigated. In terms of growth, diamond can he seen as a model substrate, providing information of systematic relevance also for other substrates. Thin Ti masks ate structured by electron beam-lithography which,allows the fabrication of perfectly homogeneous-GaN NW arrays with different diameters and distances. While the wurtzite NWS are found to be Ga-polar, N-polar nucleation leads to the forrmation of tripod structures with a zinc-blende core which can be efficiently suppressed above a substrate temperature of 870 degrees C. A variation of the III/V flux ratio reveals that both axial and radial growth rates are N-limited despite the globally N-rich growth conditions, which is explained by the different diffusion behavior of Ga and N atoms. Furthermore, it is shown that the hole arrangement has no effect on the selectivity but can be used to force a transition from nano-wire to nanotube growth by employing a highly competitive growth regime.
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