Journal
NANO LETTERS
Volume 15, Issue 8, Pages 5295-5301Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b01635
Keywords
Graphene transistor; terahertz detector; terahertz spectrum; thermoelectric effect; boron nitride; edge contact
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Funding
- University of Massachusetts Amherst
- National Science Foundation Directorate for Engineering [ECCS-1509599]
- Center for Hierarchical Manufacturing [CMMI-1025020]
- Materials Research Science and Engineering Center on Polymers [DMR-0820506]
- Directorate For Engineering [1509599] Funding Source: National Science Foundation
- Division Of Materials Research [0820506] Funding Source: National Science Foundation
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Recent intense electrical and optical studies of graphene have pushed the material to the forefront of optoelectronic research. Of particular interest is the few terahertz (THz) frequency regime where efficient light sources and highly sensitive detectors are very challenging to make. Here we present THz sources and detectors made with graphene field effect transistors (GFETs) enhanced by a double-patch antenna and an on-chip silicon lens. We report the first experimental observation of 1-3 THz radiation from graphene, as well as more than 3 orders of magnitude performance improvements in a half-edge-contacted GFET thermoelectric detector operating at similar to 2 THz. The quantitative analysis of the emitting power and its unusual charge density dependence indicate significant nonthermal noise contribution from the GFET. The polarization resolved detection measurements with different illumination geometries allow for detailed and quantitative analysis of various factors that contribute to the overall detector performance. Our experimental results represent a significant advance toward practically useful graphene THz devices.
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