Journal
NANO LETTERS
Volume 15, Issue 9, Pages 5883-5887Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b01967
Keywords
Transition metal dichalcogenides; MoS2; free carriers; excitons; time- and angle-resolved photoemission spectroscopy
Categories
Funding
- VILLUM foundation
- Lundbeck foundation
- Haldor Topsoe A/S
- Danish Strategic Research Council (CAT-C)
- EPSRC [EP/I031014/1, EP/L505079/1]
- Royal Society
- Swiss National Science Foundation (NSF)
- Danish Council for Independent Research, Natural Sciences under the Sapere Aude program [DFF-4002-00029, DFF-4090-00125]
- STFC
- BBSRC [BB/J019054/1] Funding Source: UKRI
- EPSRC [EP/I031014/1] Funding Source: UKRI
- Biotechnology and Biological Sciences Research Council [BB/J019054/1] Funding Source: researchfish
- Engineering and Physical Sciences Research Council [EP/I031014/1, 1778614] Funding Source: researchfish
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The dynamics of excited electrons and holes in single layer (SL) MoS2 have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS2 on a metallic substrate to directly measure the excited free carriers. This allows us to ascertain a direct quasipartide band gap of 1.95 eV and determine an ultrafast (50 fs) extraction of excited free carriers via the metal in contact with the SL MoS2. This process is of key importance for optoelectronic applications that rely on separated free carriers rather than excitons.
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