Journal
NANO LETTERS
Volume 16, Issue 1, Pages 182-187Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b03449
Keywords
Nanowires; midwavelength infrared; photodetector; InAsSb
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Funding
- DSTL [CDE 65947]
- Royal Academy of Engineering [EP/H043 993/1]
- EU Marie Curie ITN PROMIS [H2020-MSCA-ITN-2014-641899]
- Swedish Research Council
- Swedish Foundation for Strategic Research
- European Union [619509]
- EPSRC
- Engineering and Physical Sciences Research Council [1059166] Funding Source: researchfish
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Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photo-detectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20% cutoff of 2.3 mu m at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.
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