Journal
NANO LETTERS
Volume 15, Issue 4, Pages 2429-2433Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl5048219
Keywords
Germanium; nanowire; tensile strain; photo current; XRD; Laue
Categories
Funding
- CEA project 'Phare DSM-DRT: Photonics
- CEA project Phare DSM-DRT: Operando
- CEA project French national program Programme d'investissement d'Avenir, IRT Nanoelec
- Nanosciences aux limites de la Nanoelectronique Foundation
- CNRS Renatech network
Ask authors/readers for more resources
Applying tensile strain in a single germanium crystal is a very promising way to tune its bandstructure and turn it into a direct band gap semiconductor. In this work, we stress vapor-liquid-solid grown germanium nanowires along their [111] axis thanks to the strain tranfer from a silicon nitride thin film by a microfabrication process. We measure the Gamma-LH direct band gap transition by photocurrent spectrometry and quantify associated strain by X-ray Laue microdiffraction on beamline BM32 at the European Synchrotron Radiation Facility. Nanowires exhibit up to 1.48% strain and an absorption threshold down to 0.73 eV, which is in good agreement with theoretical computations for the Gamma-LH transition, showing that the nanowire geometry is an efficient way of applying tensile uniaxial stress along the [111] axis of a germanium crystal.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available