Journal
NANO LETTERS
Volume 15, Issue 4, Pages 2640-2644Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b00235
Keywords
Perovskite light emitting diode; perovskite-polymer blend; perovskite nanocrystals; petovskite morphology
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Funding
- Gates Cambridge Trust
- Singapore National Research Foundation (Energy Innovation Programme Office)
- KACST-Cambridge University Joint Centre of Excellence
- Royal Society/Sino-British Fellowship Trust
- Engineering and Physical Sciences Research Council, UK
- EPSRC [EP/M005143/1, EP/M023532/1, EP/G060738/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/G060738/1, EP/M005143/1, EP/M023532/1] Funding Source: researchfish
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Electroluminescence in light-emitting devices relies on the encounter and radiative recombination of electrons and holes in the emissive layer. In organometal halide perovskite light-emitting diodes, poor film formation creates electrical shunting paths, where injected charge carriers bypass the perovskite emitter, leading to a loss in electroluminescence yield. Here, we report a solution-processing method to block electrical shunts and thereby enhance electroluminescence quantum efficiency in perovskite devices. In this method, a blend of perovskite and a polyimide precursor dielectric (PIP) is solution-deposited to form perovskite nanocrystals in a thin-film matrix of PIP. The PIP forms a pinhole-free charge-blocking layer, while still allowing the embedded perovskite crystals to form electrical contact with the electron and hole-injection layers. This modified structure reduces nonradiative current losses and improves quantum efficiency by 2 orders of magnitude, giving an external quantum efficiency of 1.2%. This simple technique provides an alternative route to circumvent film formation problems in perovskite optoelectronics and offers the possibility of flexible and high-performance light-emitting displays.
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