Journal
NANO LETTERS
Volume 15, Issue 12, Pages 8000-8007Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b03218
Keywords
transition metal dichalcogenides (TMD); bilayer MoS2; dual gate FET; tunable bandgap; photoluminescence; interlayer transition
Categories
Funding
- NSF [DMR-1206200]
- Center for Low Energy Systems Technology (LEAST), one of six centers of STARnet, a Semiconductor Research Corporation - MARCO
- Center for Low Energy Systems Technology (LEAST), one of six centers of STARnet, a Semiconductor Research Corporation - DARPA
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1206200] Funding Source: National Science Foundation
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Artificial semiconductors with manufactured band structures have opened up many new applications in the field of optoelectronics. The emerging two-dimensional (2D) semiconductor materials, transition metal dichalcogenides (TMDs), cover a large range of bandgaps and have shown potential in high performance device applications. Interestingly, the ultrathin body and anisotropic material properties of the layered TMDs allow a wide range modification of their band structures by electric field, which is obviously desirable for many nanoelectronic and nanophotonic applications. Here, we demonstrate a continuous bandgap tuning in bilayer MoS2 using a dual-gated field-effect transistor (FET) and photoluminescence (PL) spectroscopy. Density functional theory (DFT) is employed to calculate the field dependent band structures, attributing the widely tunable bandgap to an interlayer direct bandgap transition. This unique electric field controlled spontaneous bandgap modulation approaching the limit of semiconductor-to-metal transition can open up a new field of not yet existing applications.
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