Journal
NANO LETTERS
Volume 15, Issue 6, Pages 3820-3826Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b00553
Keywords
Topological insulator; Sb2Te3; strain; PPMS; THz; DFT
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Funding
- National Research Foundation of Korea (NRF) - Korea government (MSIP) [2015R1A2A1A01007560]
- Korea Research Institute of Standards and Science under the Metrology Research Center
- National Research Foundation of Korea [2015R1A2A1A01007560] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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For three-dimensional (3D) topological insulators that have a layered structure, strain was used to control critical physical properties. Here, we show that tensile strain decreases bulk carrier density while accentuating transport of topological surface state using temperature-dependent resistance and magneto-resistance measurements, terahertz-time domain spectroscopy and density functional theory calculations. The induced strain was confirmed by transmittance X-ray scattering measurements. The results show the possibility of reversible topological surface state device control using structural deformation.
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