Journal
NANO LETTERS
Volume 15, Issue 6, Pages 3677-3683Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl504690r
Keywords
Semiconductor nanowires; self-assisted growth; InAs; GaAs; heterostructure; molecular beam epitaxy
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Funding
- Fondazione CARIPLO [EIDOS/2011-0382]
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We present the fabrication of axial InAs/GaAs nanowire heterostructures on silicon with atomically sharp interfaces by molecular beam epitaxy. Our method exploits the crystallization at low temperature, by As supply, of In droplets deposited on the top of GaAs NWs grown by the self-assisted (self-catalyzed) mode. Extensive characterization based on transmission electron microscopy sets an upper limit for the InAs/GaAs interface thickness within few bilayers (<= 1.5 nm). A detailed study of elastic/plastic strain relaxation at the interface is also presented, highlighting the role of nano-wire lateral free surfaces.
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