Journal
NANO LETTERS
Volume 15, Issue 2, Pages 917-922Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl5036463
Keywords
Graphene; copper oxide; dielectric; catalysis; electronic properties; ARPES; STM
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Funding
- Foundation for Fundamental Research on Matter (FOM) part of The Netherlands Organization for Scientific Research (NWO)
- European Research Council [ERC-2012-StG 307760-SURFPRO]
- NWO (Chemical Sciences, VIDI) [700.10.424]
- NWO (Chemical Sciences, VENI) [722.012.010]
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The epitaxial growth of graphene on catalytically active metallic surfaces via chemical vapor deposition (CVD) is known to be one of the most reliable routes toward high-quality large-area graphene. This CVD-grown graphene is generally coupled to its metallic support resulting in a modification of its intrinsic properties. Growth on oxides is a promising alternative that might lead to a decoupled graphene layer. Here, we compare graphene on a pure metallic to graphene on an oxidized copper surface in both cases grown by a single step CVD process under similar conditions. Remarkably, the growth on copper oxide, a high-k dielectric material, preserves the intrinsic properties of graphene; it is not doped and a linear dispersion is observed close to the Fermi energy. Density functional theory calculations give additional insight into the reaction processes and help explaining the catalytic activity of the copper oxide surface.
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