Journal
NANO LETTERS
Volume 15, Issue 8, Pages 5284-5288Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b01610
Keywords
Ionic liquid gating; suspended structure; molybdenum disulfide; metal-insulator transition
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Funding
- FAME
- MARCO
- DARPA
- UC Lab Fees Research Program [237789]
- CONSEPT center at UCR
- [NSF/ECCS-1404671]
- Div Of Electrical, Commun & Cyber Sys [1404671] Funding Source: National Science Foundation
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We demonstrate ionic liquid (IL) gating of suspended few-layer MoS2 transistors, where ions can accumulate on both exposed surfaces. Upon application of IL, all free-standing samples consistently display more significant improvement in conductance than substrate-supported devices. The measured IL gate coupling efficiency is up to 4.6 x 10(13) cm(-2) V-1. Electrical transport data reveal contact-dominated electrical transport properties and the Schottky emission as the underlying mechanism. By modulating IL gate voltage, the suspended MoS2 devices display metal-insulator transition. Our results demonstrate that more efficient charge induction can be achieved in suspended two-dimensional (2D) materials, which with further optimization, may enable extremely high charge density and novel phase transition.
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