Journal
NANO LETTERS
Volume 15, Issue 9, Pages 5791-5798Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b01792
Keywords
van der Waals heterojunction; Esaki diode; tunneling junction; negative differential resistance (NDR); black phosphorus (BP); tin diselenide (SnSe2)
Categories
Funding
- NSF CARRER
- NSF
- AFOSR
- Center for Low Energy Systems Technology (LEAST), one of the six SRC STARnet Centers
- MARCO
- DARPA
- National Science Foundation [ECCS-0335765]
- National Science Foundation Materials Research Science and Engineering Centers (MRSEC) program [DMR 1120296]
- Emerging Frontiers & Multidisciplinary Activities
- Directorate For Engineering [1433490] Funding Source: National Science Foundation
Ask authors/readers for more resources
van der Waals (vdW) heterojunctions composed of two-dimensional (2D) layered materials are emerging as a solid-state materials family that exhibits novel physics phenomena that can power a range of electronic and photonic applications. Here, we present the first demonstration of an important building block in vdW solids: room temperature Esaki tunnel diodes. The Esaki diodes were realized in vdW heterostructures made of black phosphorus (BP) and tin diselenide (SnSe2), two layered semiconductors that possess a broken-gap energy band offset. The presence of a thin insulating barrier between BP and SnSe2 enabled the observation of a prominent negative differential resistance (NDR) region in the forward-bias current voltage characteristics, with a peak to valley ratio of 1.8 at 300 K and 2.8 at 80 K. A weak temperature dependence of the NDR indicates electron tunneling being the dominant transport mechanism, and a theoretical model shows excellent agreement with the experimental results. Furthermore, the broken-gap band alignment is confirmed by the junction photoresponse, and the phosphorus double planes in a single layer of BP are resolved in transmission electron microscopy (TEM) for the first time. Our results represent a significant advance in the fundamental understanding of vdW heterojunctions and broaden the potential applications of 2D layered materials.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available