Journal
NANO LETTERS
Volume 15, Issue 8, Pages 5580-5584Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b02226
Keywords
III-V nanowires; silicon integration; self-catalyzed growth; growth kinetics; size distribution; focusing effect
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Funding
- European Community [PITN-GA-2012-316751]
- EQUIPEX program Excelsior
- RENATECH network
- Region Nord-Pas-de-Calais
- National Natural Science Foundation of China [61204014]
- Russian Science Foundation [14-22-00018]
- Russian Science Foundation [14-22-00018] Funding Source: Russian Science Foundation
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Designing strategies to reach monodispersity in fabrication of semiconductor nanowire ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire arrays are grown by molecular beam epitaxy with help of droplet-engineering, we observe a significant narrowing of the diameter distribution of the final nanowire array with respect to the size distribution of the initial Ga droplets. Considering that the droplet serves as a nonequilibrium reservoir of a group III metal, we develop a model that demonstrates a self-equilibration effect on the droplet size in self-catalyzed III V nanowires. This effect leads to arrays of nanowires with a high degree of uniformity regardless of the initial conditions, while the stationary diameter can be further finely tuned by varying the spacing of the array pitch on patterned Si substrates.
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