Journal
NANO LETTERS
Volume 15, Issue 5, Pages 3547-3551Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b01021
Keywords
Complex oxides; heterointerfaces; 2D electron gas; memristors; resistive switching
Categories
Funding
- National Science Foundation (NSF) through Nebraska Materials Research Science and Engineering Center (MRSEC) [DMR-1420645]
- US Department of Energy, Office of Science, Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-SC0004876]
- NSF [DMR-1234096]
- AFOSR [FA9550-12-1-0342]
- European Research Council (ERC)
- Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy
- ICREA Funding Source: Custom
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1234096] Funding Source: National Science Foundation
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in recent years, complex-oxide heterostructures and their interfaces have become the focus of significant research activity, primarily driven by the discovery of emerging states and functionalities that open up opportunities for the development of new oxide-based nanoelectronic devices. The highly conductive state at the interface between insulators LaAlO3 and SrTiO3 is a prime example of such emergent functionality, with potential application in high electron density transistors. In this report, we demonstrate a new paradigm for voltage-free tuning of LaAlO3/SrTiO3 (LAO/STO) interface conductivity, which involves the mechanical gating of interface conductance through stress exerted by the tip of a scanning probe microscope. The mechanical control Of channel conductivity and the long retention time of the induced resistance states enable transistor functionality with zero gate voltage.
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