4.8 Article

Nucleation Control for Large, Single Crystalline Domains of Mono layer Hexagonal Boron Nitride via Si-Doped Fe Catalysts

Journal

NANO LETTERS
Volume 15, Issue 3, Pages 1867-1875

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nl5046632

Keywords

Hexagonal boron nitride (h-BN); chemical vapor-deposition (CVD); borazine (HBNH)(3); in situ X-ray diffraction (XRD); secondary ion mass spectrometry (SIMS); Fe catalyst

Funding

  1. EPSRC (Doctoral training award)
  2. St. John's College
  3. Research Fellowship at Hughes Hall
  4. ERC grant InsituNANO [279342]
  5. National Measurement Office (NMO) through the Innovation, Research and Development (IRD) programme [115948]
  6. European Research Council (ERC) [279342] Funding Source: European Research Council (ERC)

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The scalable chemical vapor deposition of monolayer hexagonal boron nitride (h-BN) single crystals, with lateral dimensions of similar to 0.3 mm, and of continuous h-BN monolayer films With large domain sizes (>25 mu m) is demonstrated via an admixture of Si to Fe catalyst films. A simple thin-filth Fe/'SiO2/Si catalyst system is used to show that controlled Si diffusion into the Fe catalyst allows exclusive nucleation of monolayer h-BN with very low nucleation densities upon exposure to undiluted borazine. Our systematic in situ and ex situ characterization of this catalyst system establishes, a basis for further rational catalyst design for compound 2D materials.

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