Journal
NANO LETTERS
Volume 15, Issue 11, Pages 7567-7573Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b03312
Keywords
single quantum emitter; transition metal dichalcogenide semiconductor; mono- and bilayer WSe2; patterned substrate; strain
Categories
Funding
- Royal Society University Research Fellowship
- EPSRC [EP/I023186/1, EP/K015338/1, EP/L015110/1]
- ERC [307392]
- EPSRC [EP/K015338/1, EP/I023186/1, EP/M013472/1, EP/N003446/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/K015338/1, EP/N003446/1, EP/I023186/1, EP/M013472/1, 1405697] Funding Source: researchfish
- European Research Council (ERC) [307392] Funding Source: European Research Council (ERC)
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Two-dimensional transition metal dichalcogenide semiconductors are intriguing hosts for quantum light sources due to their unique optoelectronic properties. Here, we report that strain gradients, either unintentionally induced or generated by substrate patterning, result in spatially and spectrally isolated quantum emitters in mono- and bilayer WSe2. By correlating localized excitons with localized strain variations, we show that the quantum emitter emission energy can be red-tuned up to a remarkable similar to 170 meV. We probe the fine-structure, magneto-optics, and second-order coherence of a strained emitter.These results raise the prospect of strain-engineering quantum emitter properties and deterministically creating arrays of quantum emitters in two-dimensional semiconductors.
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