Journal
NANO LETTERS
Volume 15, Issue 6, Pages 3709-3715Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b00089
Keywords
Self-catalyzed GaAsSb nanowires; self-induced compositional variation; rectifying behavior; molecular beam epitaxy; photodetectors; logic circuits
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Funding
- Research Council of Norway (FORNY program) [217566]
- FRINATEK program [214235]
- NANO2021 program [228758]
- Norwegian Micro- and Nano-Fabrication Facility, NorFab [197411/V30]
- BSR [2012R1A2A2A01045496]
- National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [20121C2A1A2032569]
- Norwegian Micro- and Nano-Fabrication Facility
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Device configurations that enable a unidirectional propagation of carriers in a semiconductor are fundamental components for electronic and optoelectronic applications. To realize such devices, however, it is generally required to have complex processes to make p-n or Schottky junctions. Here we report on a unidirectional propagation effect due to a self-induced compositional variation in GaAsSb nanowires (NWs). The individual GaAsSb NWs exhibit a highly reproducible rectifying behavior, where the rectifying direction is determined by the NW growth direction. Combining the results from confocal micro-Raman spectroscopy, electron microscopy, and electrical measurements, the origin of the rectifying behavior is found to be associated with a self-induced variation of the Sb and the carrier concentrations in the NW. To demonstrate the usefulness of these GaAsSb NWs for device applications, NW-based photodetectors and logic circuits have been made.
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