4.8 Article

Strong Hall-Petch Type Behavior in the Elastic Strain Limit of Nanotwinned Gold Nanowires

Journal

NANO LETTERS
Volume 15, Issue 6, Pages 3865-3870

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b00694

Keywords

Nanotwin; metallic nanowires; ideal elastic strain limit; Hall-Petch hardening; elastic strain engineering; in situ transmission electron microscopy

Funding

  1. NSF through University of Pittsburgh [CMMI 08010934]
  2. Sandia National Lab
  3. NSF [DMR-0747658, DMR-1410646]
  4. U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
  5. Division Of Materials Research
  6. Direct For Mathematical & Physical Scien [1410646] Funding Source: National Science Foundation

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Pushing the limits of elastic deformation in nanowires subjected to stress is important for the design and performance of nanoscale devices from elastic strain engineering. Particularly, introducing nanoscale twins has proved effective in rising the tensile strength of metals. However, attaining ideal elastic strains in nanotwinned materials remains challenging, because nonuniform twin sizes locally affect the yielding behavior. Here, using in situ high-resolution transmission electron microscopy tensile testing of nanotwinned [111]-oriented gold nanowires, we report direct lattice-strain measurements that demonstrate a strong Hall-Petch type relationship in the elastic strain limit up to 5.3%, or near the ideal theoretical limit, as the twin size is decreased below 3 nm. It is found that the largest twin in nanowires with irregular twin sizes controls the slip nucleation and yielding processes in pure tension, which is in agreement with earlier atomistic simulations. Continuous hardening behavior without loss of strength or softening is observed in nanotwinned single-crystalline gold nanowires, which differs from the behaviors of bulk nanocrystalline and nanotwinned-nanocrystalline metals. These findings are of practical value for the use of nanotwinned metallic and semiconductor nanowires in strain-engineered functional microdevices.

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