Journal
NANO LETTERS
Volume 15, Issue 9, Pages 5778-5783Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b01746
Keywords
Black phosphorus; dual-gate FET; OLED switching; NOR logic; inverter
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Funding
- NRF (NRL program) [2014R1A2A1A01004815]
- Nano-Materials Technology Development Program [2012M3A7B4034985]
- Yonsei University (Future-leading Research Initiative) [2014-22-0168]
- KIST Institution Program [2 V04010]
- Brain Korea 21 plus Program
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We have fabricated dual gate field effect transistors (FETs) with 12 nm-thin black phosphorus (BP) channel on glass substrate, where our BP FETs have a patterned-gate architecture with 30 nm-thick Al2O3 dielectrics on top and bottom of a BP channel. Top gate dielectric has simultaneously been used as device encapsulation layer, controlling the threshold voltage of FETs as well when FETs mainly operate under bottom gate bias. Bottom, top, and dual gate-controlling mobilities were estimated to be 277, 92, and 213 cm(2)/V s, respectively. Maximum ON-current was measured to be similar to 5 mu A at a drain voltage of -0.1 V but to be as high as similar to 50 mu A at -1 V, while ON/OFF current ratio appeared to be 3.6 x 10(3) V. As a result, our dual gate BP FETs demonstrate organic light emitting diode (OLED) switching for green and blue OLEDs, also demonstrating NOR logic functions by separately using top-and bottom-input.
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