Journal
NANO LETTERS
Volume 15, Issue 3, Pages 2019-2023Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl504871u
Keywords
Chern insulator; quantum anomalous Hall effect; band inversion; heterostructure
Categories
Funding
- U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-AC02-76SF00515]
- Defense Advanced Research Projects Agency Microsystems Technology Office, MesoDynamic Architecture Program (MESO) [N66001-11-1-4105]
- FAME, one of six centers of STARnet, a Semiconductor Research Corporation program - MARCO
- FAME, one of six centers of STARnet, a Semiconductor Research Corporation program - DARPA
- 973 program of China [2013CB921704]
- NSF of China
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On the basis of ab initio Calculations, we predict that a monolayer of Cr-doped (Bi,Sb)(2)Te-3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a nontrivial band gap up to 38 meV. The principle behind our prediction is that the band inversion between two topologically trivial ferromagnetic insulators can result in a nonzero Chem number, which offers a better way to realize the quantum anomalous Hall state without random magnetic doping. In addition, a simple effective model is presented to describe the basic mechanism of spin polarized band inversion in this system. Moreover, we predict that 3D quantum anomalous Hall insulator could-be realized-in (Bi2/3Cr1/3)(2)Te-3 /GdI2 superlattice.
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