Journal
NANO LETTERS
Volume 15, Issue 2, Pages 876-882Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl503556a
Keywords
Epitaxial growth; defect-free; InAs nanowires; MBE
Categories
Funding
- Australian Research Council
- National Basic Research Program of China [2011CB925604]
- National Science Foundation of China [61376015, 91321311, 11334008, 91121009]
- Shanghai Science and Technology Foundation [13JC1405901]
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In this study, we demonstrate the epitaxial growth of < 00 (1) over bar > defect-free zinc-blende structured InAs nanowires on GaAs {111}(B) substrate using Au catalysts in molecular beam epitaxy. It has been found that the catalysts and their underlying < 00 (1) over bar > nanowires have the orientation relationship of {11 (0) over bar3}(C)//{00 (2) over bar}(InAs) and [3 (3) over bar 02](C)//[11 (0) over bar](InAs) due to their small in-plane lattice mismatches between their corresponding lattice spacings perpendicular to the {00 (1) over bar} atomic planes of the nanowires, leading to the formation of the {00 (1) over bar} catalyst/nanowire interfaces, and consequently the formation of < 00 (1) over bar > nanowires. This study provides a practical approach to manipulate the crystal structure and structural quality of III-V nanowires through carefully controlling the crystal phase of the catalysts.
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