Journal
JETP LETTERS
Volume 96, Issue 11, Pages 735-738Publisher
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S0021364012230038
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Very recently, the newest class of spintronic materials, where reversible spin polarization can be controlled by applying gate voltage: so-called bipolar magnetic semiconductors (Xingxing Li et al., arXiv:1208.1355) was proposed. In this work, a novel way to creation of bipolar magnetic semiconductors by doping of non-magnetic semiconducting 1111 phases with magnetic d(n<10) atoms is discussed using ab initio calculations of layered YZnAsO doped with Fe and Mn. In addition, more complex materials with several spectral intervals with opposite 100% spin polarization where multiple gate-controlled spin-polarization can be expected are proposed. DOI: 10.1134/S0021364012230038
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